| PART |
Description |
Maker |
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| FJL4215RTU 2SA1943RTU |
17 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-264AA TO-264, 3 PIN
PNP Epitaxial Silicon Transistor; Package: TO-264; No of Pins: 3; Container: Rail
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| SF2N4931 2N4931 SF_2N4931 2N4931.MODE1 |
500 mA, 250 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
SEME-LAB[Seme LAB]
|
| MJ15024 MJ15022 ON1983 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| TW13-D787-001 TW13-D783-001 SKYWORKSSOLUTIONSINC.- |
250 - 2700 MHz Linear, Low Current Power Amplifier Driver 250 - 2700 MHz的线性，低电流功率放大器驱动
|
TE Connectivity, Ltd.
Skyworks Solutions, Inc.
|
| MJE5850 MJE5850-D MJE5851 |
Power 8A 300V Discrete PNP
SWITCHMODE Series PNP Silicon Power Transistors
Power 8A 350V Discrete PNP
|
ON Semiconductor
|
| SFT1001 |
100AMP HIGH SPEED PNP TRANSISTOR 250 VOLTS
|
SSDI[Solid States Devices, Inc]
|
| RD27FM RD6.2FM RD12FM RD5.1FM RD9.1FM RD51FM RD4.7 |
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
CA-BAYONET
ZENER DIODES
Zener diode 1 W 2-pin power mini mold
Constant Voltage diode 1W 2pin power mini mold
|
Electronics Industry Public Company Limited
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| BCW29235 |
PNP general purpose transistors - Complement: BCW31 ; fT min: 100 MHz; hFE max: 260 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 32 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| 2SB1371 |
Silicon PNP triple diffusion planar type(For high power amplification) 6 A, 120 V, PNP, Si, POWER TRANSISTOR
|
TE Connectivity, Ltd.
PANASONIC[Panasonic Semiconductor]
|
